Gate-tunable plasticity in artificial synaptic devices based on four-terminal amorphous gallium oxide memristors

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN m...

Gate-Tunable Conducting Oxide Metasurfaces.

Metasurfaces composed of planar arrays of subwavelength artificial structures show promise for extraordinary light manipulation. They have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces, and orbital angular momentum manipulation and detection over a broad range of the electromagnetic spectrum. However, the optical properties of metasurfaces dev...

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic networks - due to their excellent scaling prospects. Since some advanced cognitive tasks require spiking neuromorphic networks, which explicitly model individual neural pulses ("spikes") in biological neural systems, it is c...

Supporting Information Gate-Tunable Conducting Oxide Metasurfaces

Tunnel junction based memristors as artificial synapses

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junc...